Thermal Management of Gallium Nitride Electronics Tadjer Marko
Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal…
Specifikacia Thermal Management of Gallium Nitride Electronics Tadjer Marko
Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal conductivity path close to the heat generation source in a wide bandgap semiconductor device such as the Gallium Nitride high electron mobility transistor.Over the past 10 years, the authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the
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